FQD19N10L datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V
* Low Gate Charge (Typ. 14 nC)
* Low Crss (Typ. 35 pF)
* 100% Avalanche Tested D D G S D-PAK G .

Application

Features
* 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V
* Low Gate Charge (Typ. 14 nC)
* Low Crss (.

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

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